Assembly and structures of five new Cu(II) complexes based on the V-shaped building block [Cu(dbsf)]

Five new copper(II) complexes [Cu(dbsf)(H₂O)]_n · 0.5n(i-C₃H₇OH) (1), [Cu(dbsf)(4,4′-bpy)_0.5]_n · nH₂O (2), [Cu(dbsf)(2,2′-bpy)(H₂O)]₂ · (n-C₃H₇OH) · 0.5H₂O (3), [Cu(dbsf)(phen)(H₂O)]₂ · 1.5H₂O (4) and [Cu(dbsf)(2,2′-bpy)(H₂O)]_n · n(i-C₃H₇OH) (5) (H₂dbsf = 4,4′-dicarboxybiphenyl sulfone, 4,4′-bpy = 4,4′-bipyridine, 2,2′-bpy = 2,2′-bipyridine, phen = 1,10-phenanthroline, i-C₃H₇OH = isopropanol, n-C₃H₇OH = n-propanol) have been synthesized under hydro/solvothermal conditions. All of the complexes are assembled from V-shaped building blocks, [Cu(dbsf)]. Complex 1 is composed of 1D double-chains. In complex 2, dbsf²⁻ ligands and 4,4′-bpy ligands connect Cu(II) ions into catenane-like 2D layers. These catenane-like 2D layers stack in an ABAB fashion to form a 3D supramolecular network. Complexes 3 and 4 are 0D dimers, in which two [Cu(dbsf)] units encircle to form dimetal macrocyclic molecules. However, in complex 5, the V-shaped building blocks [Cu(dbsf)] are joined head-to-tail, resulting in the formation of infinite tooth-like chains. The different structures of complexes 3 and 5 may be attributed to the different solvent molecules included.     

Analyses without calibration curve for determination of indium in sediment and geochemical samples

Influences of atomization temperatures on the characteristic mass and the atomic absorption coefficient of indium were studied. The results show that the values of characteristic mass obtained from the wall, using the platform and the V-shaped boat have appeared to be stable to better than 10, 6 and 12% in the range of 1600–2400 °C, respectively. The determination of indium without calibration curve by furnace with the V-shaped boat using palladium and ammonium salt of EDTA as a matrix modifier are described. The proposed method was applied to the determination of indium in standard sediment and geochemical reference samples and satisfactory results were obtained.     

中厚扁壳断裂问题的特征根及特征函数

证明了含任意切口、任意切口边界的多材料中厚扁壳问题的特征根等于相应的平面切口问题和平板弯曲切口问题两部分的特征根组合。进而证明了中厚扁壳切口问题的特征根等于相应反平面切口问题和平面切口问题的组合。中厚扁壳切口问题的特征根及其对应的0级特征函数均可直接按相应的两类基本问题（反平面切口问题和平面切口问题）进行求解。     

磁力研磨法对陶瓷管内表面超精密抛光技术的试验研究

应用磁力研磨法,利用外部磁场控制陶瓷管内部的磁粒刷运动,从而实现对整个陶瓷管内表面的超精密抛光.通过理论分析和试验结果相结合的方法验证了应用磁力研磨法对陶瓷管内表面进行光整加工方法的可行性;为了提高研磨效率,利用ANSYS软件模拟分析并结合试验验证,提出了在陶瓷管内部增加V型磁铁,改变磁回路的磁力线分布,增大了工作区域的磁感应强度,研磨效率成倍增加;通过试验分别对研磨液用量、铁粒子粒径、金刚石粒子粒径等参数对陶瓷管内表面研磨质量和效率的影响进行分析和研究,对工艺参数进行了优化设计.试验结果证明磁力研磨后陶瓷管内表面粗糙度值Ra可以由原始的0.4μm降至0.02μm,达到镜面抛光的效果,为陶瓷管内表面超精密抛光加工提供了一种新方法.     

Improvement of fabrication and characterization methods for micromechanical disk resonators

In this paper we present a novel method to fabricate reliable micro-electro-mechanical system(MEMS) disk resonators with high yield and good performance.The key breakthrough in the fabrication process is a novel approach to effectively restraining electro-chemical corrosion of polycrystalline silicon(polysilicon) electrically coupled with noble metals of MEMS devices by hydrofluoric acid(HF)-based solutions.In addition,a measurement architecture based on a differential readout topology is demonstrated.The differential circuit proposed here can effectively suppress noise and feed-through current by common-mode rejection of the differential amplifier.This differential amplifier circuit configuration is also used to build up a notch filter.The preliminary result about the temperature dependence of the resonance frequency is discussed,and the device failure is analysed.     

V形咔唑衍生物的合成及荧光性质

以N-烷基咔唑作为电子给体和共轭桥中心, 二米基硼作为端基电子受体, 合成了两个V形A-π-D-π-A型新化合物: 3,6-二{[(E)-2-(5-二米基硼)噻吩]乙烯基}-N-丁基-咔唑 {N-butyl-3,6-bis{(E)-2-[5-(dimesitylboryl)thiophen-2-yl]-vinyl}-carbazole, BBTC}和3,6-二[(E)-(4-二米基硼)苯乙烯基]-N-己基-咔唑, {N-hexyl-3,6-bis[(E)-4-(dimesitylboryl)-styryl]-carbazole, BBSC}. 这两个化合物在蓝绿光波段都有较强的荧光发射. 光谱数据表明, 扩大共轭体系并在端基引入含硼基团导致吸收谱和发射谱显著红移, 并增大分子内电荷转移.     

Reissner板切口尖端应力应变场

本文利用双重幂级数展开法推导出Reissner板切口特征方程,进而应用Muller迭代法求得不同切口张角下特征值序列解答,最后获得Reissner板切口尖端应力应变场.     

不同V型辅助配体构筑的两个镉配位聚合物的合成、结构和荧光性质

在溶剂热条件下,合成了2个基于V型辅助配体（bipmo、bppmo）的镉配位聚合物{[Cd （bipmo）（NDC）]·1.75H₂O}_n（1）和{[Cd （bppmo）（NDC）（H₂O）]·H₂O}_n（2）,其中H₂NDC=2,6-萘二羧酸,bipmo=双（4-（1H-咪唑-1-基）苯基）甲酮,bppmo=双（4-（吡啶-4-基）苯基）甲酮。利用单晶X射线衍射、键价和分析、红外光谱和元素分析对其结构进行了表征。研究发现,配合物1具有二重互穿的{6³}拓扑结构。配合物2同样是3-连接的{6³}拓扑,却存在三重穿插结构。分析表明,V型配体对最终结构的形成有很大影响。此外,对配合物1和2的发光性质也进行了详细研究。     

垒层温度对InGaN量子点/量子阱复合结构内量子效率的影响

使用金属有机化学气相沉积(metal organic chemical vapor deposition, MOCVD)方法生长了三个具有不同垒层温度的InGaN/GaN量子阱。由于高密度V型坑的形成,完整的量子阱结构被破坏,转变成了InGaN量子点(quantum dots, QDs)/量子阱(quantum well, QW)复合结构。通过变功率光致发光谱和变温光致发光谱,分析了在不同的垒层温度下量子限制斯塔克效应(quantum confined Stark effect, QCSE)、非辐射复合中心密度和载流子局域化效应的变化。结果表明:在较低的垒层温度下,QCSE较弱,因为在较低的温度下,V型坑的深度较深,应力释放较明显,残余应变较低;非辐射复合中心密度也随着温度的升高而逐渐增大;样品的内量子效率(internal quantum efficiency, IQE)随着垒层生长温度的升高而降低。QCSE的增强和非辐射复合中心密度的增大是垒层生长温度升高时内量子效率下降的主要因素。     

Construction of a 3D Co(Ⅱ) Framework Based on Two Types of V-shaped Bidentate Ligands

A three-dimensional(3D) coordination polymer {[Co(bdc)(dpb)]·H2O}n(1) was prepared by solvothermal reaction of 1,3-dipyridyl benzene(dpb) with deprotonated 1,3-benzenedicarboxylate(H2bdc), and was characterized by elemental analysis, IR spectroscopy, and X-ray single-crystal diffraction. It crystallizes in the monoclinic system, space group C2/c with a = 15.478(6), b = 12.865(5), c = 24.091(10) ?, β = 95.599(5)°, V = 4774(3) ?3, C24H18CoN2O5, Mr = 473.34, Dc = 1.267 g/cm3, F(000) = 1864.0, μ = 0.748 mm-1 and Z = 8. Each Co(II) ion links three bdc2- anions to form an infinitely 1D ladder-shaped chain containing binuclear [(COO)Co]2 cluster, and dpb links adjacent 1D chains to form a 3D pcu framework. In addition, the UV-vis of 1 was also studied.